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VISHAY
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
* Alternate Source to TLP621-2/-4 and TLP621GB-2/-4 * High Collector-Emitter Voltage, BVCEO=70 V * Dual and Quad Packages Feature: - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Isolation Test Voltage 5300 VRMS
Dual Channel
A1 C2 A3 C4
8C 7E 6C 5E
Agency Approvals
* UL File # E52744 System Code H or J * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * BSI IEC60950 IEC60965 * FIMKO
Quad Channel
A1 C2 A3 C A C
4 5 6 16 C 15 E 14 C 13 E 12 C 11 E 10 C 9E
Description
The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ ILQ621GB is well suited for CMOS interfacing given the CTR CE sat of 30 % minimum at I F of 1.0 mA. High gain linear operation is guaranteed by a minimum CTR CE of 100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTR CE 50 % minimum at 5.0 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.
i179054
A7 C8
Order Information
Part ILD621 ILD621GB ILQ621 ILQ621GB ILD621-X006 ILD621-X007 ILD621-X009 ILD621GB-X007 ILQ621-X006 ILQ621-X007 ILQ621-X009 ILQ621GB-X006 ILQ621GB-X007 ILQ621GB-X009 Remarks CTR > 50 %, DIP-8 CTR > 100 %, DIP-8 CTR > 50 %, DIP-16 CTR > 100 %, DIP-16 CTR > 50 %, DIP-8 400 mil (option 6) CTR > 50 %, SMD-8 (option 7) CTR > 50 %, SMD-8 (option 9) CTR > 100 %, SMD-8 (option 7) CTR > 50 %, DIP-8 400 mil (option 6) CTR > 50 %, SMD-16 (option 7) CTR > 50 %, SMD-16 (option 9) CTR > 100 %, DIP-16 400 mil (option 6) CTR > 100 %, SMD-16 (option 7) CTR > 100 %, SMD-16 (option 9)
For additional information on the available options refer to Option Information.
Document Number 83654 Rev. 1.3, 19-Apr-04
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ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors Absolute Maximum Ratings
VISHAY
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation Derate from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 mA 1.5 100 1.33 Unit V mA A mW mW/C
Output
Parameter Collector -emitter reverse voltage Collector current t < 1.0 ms Power dissipation Derate from 25 C Test condition Symbol VECO IC IC Pdiss Value 70 50 100 150 - 2.0 Unit V mA mA mW mW/C
Coupler
Parameter Isolation test voltage Package dissipation Derate from 25 C Package dissipation Derate from 25 C Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature 2.0 mm from case bottom RIO RIO Tstg Tamb Tj Tsld ILQ621 ILQ621GB Test condition t = 1.0 sec. ILD621 ILD621GB Part Symbol VISO Value 5300 400 400 5.33 500 500 6.67 7.0 7.0 1012 10
11
Unit VRMS mW mW mW/C mW mW mW/C mm mm C C C C
- 55 to +150 - 55 to +100 100 260
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Document Number 83654 Rev. 1.3, 19-Apr-04
VISHAY
Electrical Characteristics
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Thermal resistance, Junction to lead Test condition IF = 10 mA VR = 6.0 V VF = 0, f = 1.0 MHz Symbol VF IR CO RTHJL Min 1.0 Typ. 1.15 0.01 40 750 Max 1.3 10 Unit V A pF K/W
Output
Parameter Collector-emitter capacitance Collector-emitter leakage current Thermal resistance, Junction to lead Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 24 V Symbol CCE ICEO ICEO RTHJL Min Typ. 6.8 10 20 500 100 50 Max Unit pF nA A K/W
Coupler
Parameter Capacitance (input-output) Insulation resistance Channel to channel insulation Collector-emitter saturation voltage IF = 8.0 mA, ICE = 2.4 mA IF = 1.0 mA, ICE = 0.2 mA ILD621 ILQ621 ILD621GB ILQ621GB VCEsat VCEsat Test condition VIO = 0 V, f = 1.0 MHz VIO = 500 V Part Symbol CIO Min 0.8 10
12
Typ.
Max
Unit pF VAC
500 0.4 0.4
V V
Current Transfer Ratio
Parameter Channel/Channel CTR match Current Transfer Ratio (collector-emitter saturated) Test condition IF = 5.0 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 0.4 V ILD621 ILQ621 ILD621GB ILQ621GB Current Transfer Ratio (collector-emitter) IF = 5.0 mA, VCE = 5.0 V ILD621 ILQ621 ILD621GB ILQ621GB Part Symbol CTRX/ CTRY CTRCEs
at
Min 1 to 1
Typ.
Max 3 to 1
Unit
60 30 50 100 80 200 600 600
% % % %
CTRCEs
at
CTRCE CTRCE
Document Number 83654 Rev. 1.3, 19-Apr-04
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ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors Switching Characteristics
Non-saturated switching timing Parameter On Time Rise time Off time Fall time Propagation H-L Propagation L-H Saturated switching timing Parameter On time Rise time Off time Fall time Propagation H-L Propagation L-H Test condition IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 K, VTH = 1.5 V Symbol ton tr toff tf tPHL tPLH Min Typ. 4.3 2.8 2.5 11 2.6 7.2 Max Test condition IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP Symbol ton tr toff tf tPHL tPLH Min Typ. 3.0 2.0 2.3 2.0 1.1 2.5 Max
VISHAY
Unit s s s s s s
Unit s s s s s s
Common Mode Transient Immunity
Parameter Common mode rejection output high Common mode rejection output low Test condition VCM = 50 VP-P, RL = 1.0 K, IF = 0 mA VCM = 50 VP-P, RL = 1.0 K, IF = 10 mA Symbol CMH CML Min Typ. 5000 5000 Max Unit V/s V/s
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Document Number 83654 Rev. 1.3, 19-Apr-04
VISHAY
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
IF
F = 10 KHz, DF = 50%
tPLH VO tPLH tS 50%
VCC = 5 V RL VO
tD
iild621_01
tR
tF
iild621_04
Fig. 1 Non-saturated Switching Timing
Fig. 4 Saturated Switching Timing
120
IF - Maximum LED Current - mA
100 80 60 40 20 0 -60 TJ (MAX) = 100 C
VCC = 5 V IF = 10 mA F = 10 KHz, DF = 50%
RL = 75
VO
iild621_02
-40
-20
0
20
40
60
80
100
iild621_05
TA - Ambient Temperature - C
Fig. 2 Non-saturated Switching Timing
Fig. 5 Maximum LED Current vs. Ambient Temperature
200 IF
PLED - LED Power - mW
150
VO
tD tR t PLH VTH = 1.5 V t PHL tS tF
100
50
iild621_03
0 -60 -40
iild621_06
-20 0 20 40 60 Ta - Ambient Temperature - C
80
100
Fig. 3 Saturated Switching Timing
Fig. 6 Maximum LED Power Dissipation
Document Number 83654 Rev. 1.3, 19-Apr-04
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ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
VISHAY
1.4
tPLH - Propagation Low-High s
1000 IF = 10 mA VCC = 5 V, Vth = 1.5 V 100 tPLH
2.5
tPHL - Propagation High-Low s
VF - Forward Voltage - V
1. 3 TA = 85 C 1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 TA = 85 C TA = 85 C
2.0
10 tPHL
1.5
1 .1 1 10 100 RL - Collector Load Resistor - k
iild621_10
1.0
iild621_07
Fig. 7 Forward Voltage vs. Forward Current
Fig. 10 Propagation Delay vs. Collector Load Resistor
35
ICE - Collector Current - mA
200
PDET - Detector Power - mW
30 25 20 15 10 5 0 0 10 20 30 40 50 60 25C 85C 70C 50C
150
100
50
0 -60
iild621_11
-40
-20
0
20
40
60
80
100
iild621_08
IF - LED Current - mA
TA - Ambient Temperature - C
Fig. 8 Collector-Emitter Current vs. Temperature and LED Current
Fig. 11 Maximum Detector Power Dissipation
10 5
ICEO - Collector-Emitter - nA
1000
ICE - Collector Current - mA
10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Typical VCE = 10 V
100
Rth = 500 C/W
10 25 C 50 C 75 C 90 C
1
.1 .1 10 1 VCE - Collector-Emitter Voltage - V 100
TA - Ambient Temperature - C
iild621_09 iild621_12
Fig. 9 Collector-Emitter Leakage vs. Temperature
Fig. 12 Maximum Collector Current vs. Collector Voltage
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Document Number 83654 Rev. 1.3, 19-Apr-04
VISHAY
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
CTRNF - Normalized CTR Factor
2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce 1.0 NCTRce(sat) TA = 50 C 0.0 .1 1 10 IF - LED Current - mA 100
1.5
0.5
iild621_13
Fig. 13 Normalization Factor for Non-saturated and Saturated CTR vs. IF
CTRNF - Normalized CTR Factor
2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce
1.5
1.0
0.5
NCTRce(sat) TA = 70 C
0.0 .1 1 10 IF - LED Current - mA 100
iild621_14
Fig. 14 Normalization Factor for Non-saturated and Saturated CTR vs. IF
CTRNF - Normalized CTR Factor
2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V
1.5
1.0
NCTRce
0.5 NCTRce(sat) TA = 100 C 0.0 .1 1 10 IF - LED Current - mA 100
iild621_15
Fig. 15 Normalization Factor for Non-saturated and Saturated CTR vs. IF
Document Number 83654 Rev. 1.3, 19-Apr-04
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ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
VISHAY
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
.020 (.51 ) .035 (.89 ) .100 (2.54) typ.
10 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Package Dimensions in Inches (mm)
pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16
ISO Method A
.779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56)
i178007
.300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35)
.020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27)
10 typ. 3-9 .008 (.20) .012 (.30)
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Document Number 83654 Rev. 1.3, 19-Apr-04
VISHAY
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.0098 (.249)
.020 (.51) .040 (1.02)
.012 (.30) typ.
.315 (8.00) min.
15 max.
18450
Document Number 83654 Rev. 1.3, 19-Apr-04
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ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83654 Rev. 1.3, 19-Apr-04

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